Using Sol Gel Technique
نویسندگان
چکیده
This paper presents experimental analysis and results of GaN (being a III-V semiconductor) doped with Ferrite elements synthesized using Sol-Gel technique which are carried out at National Chemical Laboratory, Pune Maharashtra. The GaN is employed as dopant for x=1 and x=5, in the formula Ga(2x) N Fe2(49-x) O3 . A non-spinel ferrite system ( Fe2 O3) is chosen for our study. The XRD (Structural), SEM (Morphological) & FTIR spectroscopic studies were carried out to confirm the size, type of bonding and study the surface between the compounds and present results are in good agreement with the literature.
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